STB80NF55L-08-1 STMicroelectronics, STB80NF55L-08-1 Datasheet - Page 2

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STB80NF55L-08-1

Manufacturer Part Number
STB80NF55L-08-1
Description
MOSFET N-CH 55V 80A I2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB80NF55L-08-1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 4.5V
Input Capacitance (ciss) @ Vds
4350pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB80NF55L-08-1
Manufacturer:
FSC
Quantity:
5 000
Part Number:
STB80NF55L-08-1
Manufacturer:
ST
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STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
2/9
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
I
C
I
GS(th)
DS(on)
C
C
DSS
GSS
g
T
oss
iss
rss
fs
l
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
D
DS
DS
GS
V
V
V
= 250 µA, V
DS
GS
GS
CASE
= Max Rating, T
V
= Max Rating
= ± 16V
V
DS
DS
= V
= 10 V, I
= 5 V, I
Test Conditions
Test Conditions
=15V
= 25V, f = 1 MHz, V
= 25 °C UNLESS OTHERWISE SPECIFIED)
GS
Test Conditions
, I
D
D
GS
D
,
= 40 A
I
= 250µA
= 40 A
D
= 0
=40 A
C
= 125 °C
GS
= 0
Min.
Min.
55
1
Min.
62.5
300
0.5
0.0065
0.008
Typ.
Typ.
4350
1.6
Typ.
150
800
260
0.008
Max.
±100
Max.
Max.
0.01
2.5
10
1
°C/W
°C/W
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
°C
V
V
S

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