IRL2203NPBF International Rectifier, IRL2203NPBF Datasheet
IRL2203NPBF
Specifications of IRL2203NPBF
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IRL2203NPBF Summary of contents
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... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. 0. 94953 IRL2203NPbF ® HEXFET Power MOSFET 30V DSS R = 7.0mΩ DS(on 116A TO-220AB Max. Units 116 82 A ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...
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1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 C oss 2000 1000 C ...
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LIMITED BY PACKAGE 100 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 ...
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D.U 20V V GS 0.01 Ω Charge 6 600 500 DRIVER 400 + ...
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D.U.T + - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...
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Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 1 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...