IRL2203NPBF International Rectifier, IRL2203NPBF Datasheet - Page 2

• Manufacturer Part Number: IRL2203NPBF
• Description: MOSFET N-CH 30V 116A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRL2203NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.007Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 116A
• Power Dissipation: 180W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Mounting Style: Through Hole
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL2203NPBF

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
Notes:
R
L
V
∆V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
E
I
I
V
t
Q
t
DSS
d(on)
r
d(off)
f
SM
S
rr
on
D
fs
S
2
DS(on)
(BR)DSS
GS(th)
AS
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
G
= 25Ω, I
/∆T
J
J
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 0.16mH
AS
= 60A, V
GS

Parameter
Parameter
=10V (See Figure 12)
J
= 25°C (unless otherwise specified)
‚
ƒ
„
…
†
‡
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
T
This is a calculated value limited to T
operation outside rated limits.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1320…290†
SD
Min. Typ. Max. Units
1.0
–––
Min. Typ. Max. Units
–––
30
73
–––
–––
–––
–––
–––
J
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 60A di/d ≤ 110A/µs, V
0.029 –––
3290 –––
1270 –––
4.5
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
160
7.5
170
110
–––
–––
–––
11
23
66
56
116
–––
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
170
7.0
1.2
10
25
60
14
33
400
84
‡
V/°C
mΩ
mJ
µA
nA
nC
pF
nC
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
DD
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
J
J
= 60A
= 60A
= 25°C, I
= 25°C, I
= 60A, L = 0.16mH
= 1.8Ω
≤ V
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V, See Fig. 6 and 13
= 15V
= 4.5V, See Fig. 10 „
= 0V
(BR)DSS
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
D
= 250µA
GS
GS
Conditions
= 60A
= 60A, V
,
= 250µA
= 60A
= 60A„
= 48A
„
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
„
„
J
= 125°C
= 0V
G
G
S
„
+L
D
S
D
)
S
D