IRF3808SPBF International Rectifier, IRF3808SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF3808SPBF
• Description: MOSFET N-CH 75V 106A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3808SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 82A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 106A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 5310pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 106 A
• Gate Charge, Total: 150 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 5.9 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 68 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 100 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3808SPBF

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0.01
120
100
0.1
80
60
40
20
0.00001
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature
Case Temperature
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
( C)
0.001
°
t , Rectangular Pulse Duration (sec)
1
150
175
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D =
2. Peak T
IRF3808S/LPbF
Notes:
0.1
t
r
J
= P
DM
x Z
t / t
1
thJC
P
2
t
d(off)
DM
1
+ T
C
t
1
t
f
t
2
+
-
5
10