IRF1404SPBF International Rectifier, IRF1404SPBF Datasheet

IRF1404SPBF

Manufacturer Part Number

IRF1404SPBF

Description

MOSFET N-CH 40V 162A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF1404LPBF.pdf (11 pages)

Specifications of IRF1404SPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4 mOhm @ 95A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

162A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

200nC @ 10V

Input Capacitance (ciss) @ Vds

7360pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4 m Ohms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

162 A

Power Dissipation

200 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

26 ns

Gate Charge Qg

160 nC

Minimum Operating Temperature

- 55 C

Rise Time

140 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF1404SPBF

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Description

Seventh Generation HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area.

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF1404L) is available for low-

profile applications.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

www.irf.com

STG

θJC

θJA

Pak is suitable for high current applications because of

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

This benefit, combined with the fast

Continuous Drain Current, V

Pulsed Drain Current ‡

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‡

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ‡

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mounted, steady-state)

Power MOSFETs from

Parameter

@ 10V‡

IRF1404SPbF

Typ.

300 (1.6mm from case )

–––

HEXFET

Pak

-55 to +175

162†

115†

Max.

650

200

± 20

519

3.8

1.3

5.0

IRF1404SPbF

IRF1404LPbF

Power MOSFET

DS(on)

Max.

TO-262

0.75

DSS

= 162A†

= 0.004Ω

= 40V

PD -95104

Units

W/°C

°C/W

V/ns

°C

03/11/04

Related parts for IRF1404SPBF

IRF1404SPBF Summary of contents

Page 1

... IRF1404SPbF Max. @ 10V‡ 162† 10V‡ 115† GS -55 to +175 -55 to +175 300 (1.6mm from case ) Typ. ––– * ––– PD -95104 IRF1404SPbF IRF1404LPbF ® Power MOSFET V = 40V DSS R = 0.004Ω DS(on 162A† D TO-262 IRF1404LPbF Units ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...

Page 4

1MHz iss rss gd 10000 oss ds gd 8000 C iss 6000 4000 C oss 2000 ...

Page 5

LIMITED BY PACKAGE 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent Fig 14. For N-channel www.irf.com + • • ƒ • - „ - • • • • ...

Page 8

Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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