IRF1404SPBF International Rectifier, IRF1404SPBF Datasheet - Page 6

• Manufacturer Part Number: IRF1404SPBF
• Description: MOSFET N-CH 40V 162A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1404SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 162A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 7360pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 162 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 26 ns
• Gate Charge Qg: 160 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 140 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1404SPBF

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V DS
Same Type as D.U.T.
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I AS
.3µF
D.U.T
0.01 Ω
L
I
G
Charge
Q
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
1200
1000
800
600
400
200
Fig 12d. Typical Drain-to-Source Voltage
50
48
46
44
42
40
0
25
Fig 12c. Maximum Avalanche Energy
0
Starting T , Junction Temperature( C)
50
Vs. Avalanche Current
20
I AV , Avalanche Current ( A)
Vs. Drain Current
J
75
40
100
60
125
TOP
BOTTOM
www.irf.com
80
150
I D
39A
67A
95A
°
175
100