IRFB61N15DPBF International Rectifier, IRFB61N15DPBF Datasheet - Page 3

MOSFET N-CH 150V 60A TO-220AB

IRFB61N15DPBF

Manufacturer Part Number
IRFB61N15DPBF
Description
MOSFET N-CH 150V 60A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB61N15DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
32 mOhm @ 36A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
3470pF @ 25V
Power - Max
2.4W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
60 A
Gate Charge, Total
95 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
0.032 Ohm
Resistance, Thermal, Junction To Case
0.45 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
28 ns
Time, Turn-on Delay
18 ns
Transconductance, Forward
22 S
Voltage, Breakdown, Drain To Source
150 V
Voltage, Drain To Source
150 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB61N15DPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB61N15DPBF
Manufacturer:
Schneider
Quantity:
2 000
Company:
Part Number:
IRFB61N15DPBF
Quantity:
9 000
Company:
Part Number:
IRFB61N15DPBF
Quantity:
25 780
www.irf.com
1000
1000
0.01
0.01
Fig 3. Typical Transfer Characteristics
100
100
Fig 1. Typical Output Characteristics
0.1
0.1
10
10
1
1
0.1
4
TOP
BOTTOM
T = 175 C
J
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T = 25 C
GS
J
°
, Drain-to-Source Voltage (V)
6
, Gate-to-Source Voltage (V)
°
1
4.5V
8
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
10
= 25V
10
°
12
100
1000
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
0.1
I =
D
TOP
BOTTOM
62A
V
T , Junction Temperature ( C)
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
IRFB61N15DPbF
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100

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