IRFS4321TRLPBF International Rectifier, IRFS4321TRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRFS4321TRLPBF
• Description: MOSFET N-CH 150V 83A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4321TRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 83A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4460pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFS4321TRLPBFTR

Notes:

‚
ƒ
Static @ T
V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
V
(BR)DSS
GS(th)
SD
DS(on)
G(int)
iss
oss
rss
g
gs
gd
rr
temperature. Package limitation current is 75A
above this value.
2
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
temperature.
Symbol
Symbol
Symbol
R
(BR)DSS
G
= 25 , I
/ T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 50A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.096mH
Ãd
Parameter
Parameter
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
150
–––
–––
–––
–––
–––
–––
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
„
…
4460
–––
150
–––
–––
–––
–––
–––
–––
390
–––
–––
–––
300
0.8
6.5
12
60
89
71
24
21
18
25
35
82
Pulse width
-100
85
–––
––– mV/°C
100
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
330
130
450
–––
5.0
1.0
1.3
15
20
400μs; duty cycle
m
mA
μA
nA
nC
nC
ns
pF
ns
S
A
V
V
V
A
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
I
V
di/dt = 100A/μs
D
D
D
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
R
= 50A
= 50A
= 50A
= 25°C, I
= 128V,
= 2.5
= V
= 150V, V
= 150V, V
= 25V, I
= 75V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 98V
= 10V
= 0V
GS
, I
D
f
f
2%.
D
S
D
D
= 250μA
= 50A, V
= 250μA
= 50A
= 33A
GS
GS
Conditions
Conditions
Conditions
f
= 0V
= 0V, T
D
f
GS
= 1mA
J
= 0V
= 125°C
d
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f
G
D
S