IRFS4321TRLPBF International Rectifier, IRFS4321TRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFS4321TRLPBF
• Description: MOSFET N-CH 150V 83A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4321TRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 83A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4460pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFS4321TRLPBFTR

4
1000
100
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
90
80
70
60
50
40
30
20
10
Fig 11. Typical C
1
0
0.2
0
25
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
T J = 175°C
20
0.4
V SD , Source-to-Drain Voltage (V)
50
V DS, Drain-to-Source Voltage (V)
T C , Case Temperature (°C)
Case Temperature
40
Forward Voltage
0.6
75
60
LIMITED BY PACKAGE
OSS
T J = 25°C
100
0.8
80
Stored Energy
100
125
1.0
V GS = 0V
120
150
1.2
140
175
1.4
160
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
1000
100
0.1
190
180
170
160
150
140
500
400
300
200
100
10
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
100μsec
1msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
10msec
20 40 60 80 100 120 140 160 180
75
DC
100
TOP
BOTTOM
100
125
13A
20A
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50A
150
I D
1000
175