IRFB4227PBF International Rectifier, IRFB4227PBF Datasheet
IRFB4227PBF
Specifications of IRFB4227PBF
Available stocks
Related parts for IRFB4227PBF
IRFB4227PBF Summary of contents
Page 1
... Notes through are on page 8 V max (Avalanche) R typ. @ 10V DS(ON) I max @ max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f f IRFB4227PbF Key Parameters 200 typ. 240 19.7 = 100°C 130 C 175 TO-220AB D S Drain Source MOSFET Max. Units ± 260 130 330 190 2.2 W/° ...
Page 2
... IRFB4227PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...
Page 3
... IRFB4227PbF TO-220AB packages are not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T = 25° 0.18mH 25Ω Pulse width ≤ 400µs; duty cycle ≤ 2%. approximately 90° measured at θ J ...