IRFB4227PBF International Rectifier, IRFB4227PBF Datasheet - Page 3
![MOSFET N-CH 200V 65A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB4227PBF
Manufacturer Part Number
IRFB4227PBF
Description
MOSFET N-CH 200V 65A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRFB4227PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 46A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
4600pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
65 A
Gate Charge, Total
70 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
19.7 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-40 °C
Time, Turn-off Delay
21 ns
Time, Turn-on Delay
33 ns
Transconductance, Forward
49 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N Channel
Continuous Drain Current Id
65A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
19.7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
30V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
65 A
Mounting Style
Through Hole
Gate Charge Qg
70 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.024Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±30V
Operating Temp Range
-40C to 175C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB4227PBF
Manufacturer:
ATHEROS
Quantity:
560
Part Number:
IRFB4227PBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
TO-220AB packages are not recommended for Surface Mount Application.
Notes:
IRFB4227PbF
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
Half sine wave with duty cycle = 0.25, ton=1µsec.
8
Starting T
θ
is measured at
J
= 25°C, L = 0.18mH, R
T
J
of approximately 90°C.
G
= 25Ω, I
AS
= 39A.
This product has been designed and qualified for the Industrial market.
Data and specifications subject to change without notice.