IRFB4227PBF International Rectifier, IRFB4227PBF Datasheet - Page 4

• Manufacturer Part Number: IRFB4227PBF
• Description: MOSFET N-CH 200V 65A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB4227PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4600pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 65 A
• Gate Charge, Total: 70 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 19.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 33 ns
• Transconductance, Forward: 49 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 19.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 30V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 65 A
• Mounting Style: Through Hole
• Gate Charge Qg: 70 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.024Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFB4227PbF
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 11. Maximum Drain Current vs. Case Temperature
1400
1200
1000
4
800
600
400
200
8000
6000
4000
2000
70
60
50
40
30
20
10
0
0
0
Fig 7. Typical E
25
25
1
Crss
Coss
Ciss
L = 220nH
C= 0.4µF
C= 0.3µF
C= 0.2µF
50
50
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T C , CaseTemperature (°C)
Temperature (°C)
75
10
75
PULSE
100
f = 1 MHZ
vs.Temperature
100
125
100
125
150
150
175
1000
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 8. Typical Source-Drain Diode Forward Voltage
1000.0
Fig 12. Maximum Safe Operating Area
100.0
1000
10.0
100
0.1
1.0
0.1
20
16
12
10
8
4
0
1
0.2
0
1
I D = 46A
Tc = 25°C
Tj = 175°C
Single Pulse
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
20
0.4
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
40
V DS = 160V
V DS = 100V
V DS = 40V
10
0.6
100µsec
T J = 25°C
60
0.8
100
80
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V GS = 0V
1.0
100
10µsec
1µsec
1000
120
1.2