IRF8010PBF International Rectifier, IRF8010PBF Datasheet - Page 2
![MOSFET N-CH 100V 80A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF8010PBF
Manufacturer Part Number
IRF8010PBF
Description
MOSFET N-CH 100V 80A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF8010PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3830pF @ 25V
Power - Max
260W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
80 A
Gate Charge, Total
81 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
260 W
Resistance, Drain To Source On
12 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
61 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
82 V
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Mounting Style
Through Hole
Gate Charge Qg
81 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.015Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF8010PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF8010PBF
Manufacturer:
IR
Quantity:
20 000
IRF8010PbF
V
∆V
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
E
I
I
V
t
Q
t
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
AS
AR
SD
g
gs
gd
rr
2
DS(on)
(BR)DSS
eff.
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Ãh
Parameter
Parameter
Parameter
Ã
h
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
82
3830
3830
0.11
–––
–––
–––
–––
–––
–––
–––
130
120
480
280
530
–––
–––
–––
460
12
81
22
26
15
61
59
99
Typ.
-200
–––
–––
250
200
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
320
150
700
4.0
1.3
15
20
80
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
V
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 80A
= 80A
= 25°C, I
= 150°C, I
= 39Ω
= 0V, I
= 10V, I
= V
= 100V, V
= 100V, V
= 20V
= -20V
= 25V, I
= 80V
= 10V
= 50V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
310
, I
45
26
D
f
f
Conditions
Conditions
Conditions
D
S
DS
D
D
DS
DS
= 250µA
F
= 250µA
= 80A, V
= 45A
= 45A
GS
GS
= 0V to 80V
= 80A, V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
f
= 0V
= 0V, T
D
f
= 1mA
G
GS
DD
J
= 125°C
= 0V
= 50V
Units
e
mJ
mJ
A
f
D
S