IRF8010PBF International Rectifier, IRF8010PBF Datasheet - Page 3
![MOSFET N-CH 100V 80A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF8010PBF
Manufacturer Part Number
IRF8010PBF
Description
MOSFET N-CH 100V 80A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF8010PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3830pF @ 25V
Power - Max
260W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
80 A
Gate Charge, Total
81 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
260 W
Resistance, Drain To Source On
12 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
61 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
82 V
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Mounting Style
Through Hole
Gate Charge Qg
81 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.015Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF8010PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF8010PBF
Manufacturer:
IR
Quantity:
20 000
IRF8010PbF
TO-220 package is not recommended for Surface Mount Application.
Dimensions are shown in millimeters (inches)
Notes:
8
Repetitive rating; pulse width limited by
I
T
max. junction temperature.
Starting T
SD
I
AS
J
≤ 175°C.
≤ 45A, di/dt ≤ 110A/µs, V
= 45A.
EXAMPLE:
NOTES:
J
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
= 25°C, L = 0.31mH, R
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
10.54 (.415)
10.29 (.405)
1
2 3
DD
4
≤ V
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
G
(BR)DSS
1.15 (.045)
4.06 (.160)
3.55 (.140)
= 25Ω,
MIN
This product has been designed and qualified for the Industrial market.
3.78 (.149)
3.54 (.139)
M B A M
- A -
,
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
junction temperature. Package limitation current is 75A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
Calculated continuous current based on maximum allowable
as C
oss
4.69 (.185)
4.20 (.165)
INT ERNAT IONAL
Data and specifications subject to change without notice.
eff. is a fixed capacitance that gives the same charging time
oss
RECT IFIER
AS S EMBLY
LOT CODE
while V
LOGO
- B -
DS
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
is rising from 0 to 80% V
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
PART NUMBER
DSS
.