IRFP260MPBF International Rectifier, IRFP260MPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP260MPBF
• Description: MOSFET N-CH 200V 49A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP260MPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Input Capacitance (ciss) @ Vds: 4057pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 300 W
• Mounting Style: Through Hole
• Gate Charge Qg: 156 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFP260MPbF
1000
4
100
8000
7000
6000
5000
4000
3000
2000
1000
0.1
10
1
0.2
0
1
T = 175 C
J
V
Coss
SD
0.6
Crss
Ciss
V DS , Drain-to-Source Voltage (V)
°
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
T = 25 C
1.0
J
°
1.4
f = 1 MHZ
100
V
1.8
GS
= 0 V
1000
2.2
1000
100
10
1
16
12
1
8
4
0
T
T
Single Pulse
C
J
0
I =
= 25 C
= 175 C
D
OPERATION IN THIS AREA LIMITED
V
28A
DS
°
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
50
10
BY R
100
DS(on)
V
V
V
DS
DS
DS
100
= 160V
= 100V
= 40V
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150
10us
100us
1ms
10ms
1000
200