IRFP260MPBF International Rectifier, IRFP260MPBF Datasheet - Page 7

• Manufacturer Part Number: IRFP260MPBF
• Description: MOSFET N-CH 200V 49A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP260MPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Input Capacitance (ciss) @ Vds: 4057pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 300 W
• Mounting Style: Through Hole
• Gate Charge Qg: 156 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
V
V
I
IRFP260MPbF
SD
GS
DD
=10V
+
-
7