IRFB3307ZGPBF International Rectifier, IRFB3307ZGPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB3307ZGPBF
• Description: MOSFET N-CH 75V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3307ZGPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4750pF @ 50V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 79 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
Fig 9. Maximum Drain Current vs. Case Temperature
100
120
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
80
60
40
20
1
0
0.0
20
25
Fig 11. Typical C
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
30
50
T J = 175°C
T C , Case Temperature (°C)
0.5
40
75
T J = 25°C
100
1.0
50
OSS
125
60
Stored Energy
1.5
V GS = 0V
150
70
175
2.0
80
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
600
500
400
300
200
100
100
100
0.1
10
95
90
85
80
75
70
65
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
DC
10msec
100
10
1msec
TOP
BOTTOM 75A
125
100µsec
150
I D
15A
26A
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175
100