IRFB3307ZGPBF International Rectifier, IRFB3307ZGPBF Datasheet - Page 6

• Manufacturer Part Number: IRFB3307ZGPBF
• Description: MOSFET N-CH 75V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3307ZGPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4750pF @ 50V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 79 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
15
10
Fig 16. Threshold Voltage vs. Temperature
5
0
-75 -50 -25 0
0
I F = 72A
V R = 64V
T J = 25°C
T J = 125°C
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
200
T J , Temperature ( °C )
25 50 75 100 125 150 175 200
400
di F /dt (A/µs)
600
800
420
340
260
180
100
20
f
1000
0
I F = 72A
V R = 64V
T J = 25°C
T J = 125°C
200
400
di F /dt (A/µs)
600
800
420
340
260
180
100
20
15
10
20
5
0
f
0
0
I F = 48A
V R = 64V
T J = 25°C
T J = 125°C
1000
I F = 48A
V R = 64V
T J = 25°C
T J = 125°C
200
200
400
di F /dt (A/µs)
400
di F /dt (A/µs)
600
600
800
800
www.irf.com
f
1000
1000
f