IRFP4229PBF International Rectifier, IRFP4229PBF Datasheet - Page 5

MOSFET N-CH 250V 44A TO-247AC

IRFP4229PBF

Manufacturer Part Number
IRFP4229PBF
Description
MOSFET N-CH 250V 44A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP4229PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
46 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4560pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
44A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
38mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
44 A
Power Dissipation
310 W
Mounting Style
Through Hole
Gate Charge Qg
72 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Fig 15. Threshold Voltage vs. Temperature
0.40
0.30
0.20
0.10
0.00
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25
5
0.001
0.01
0.1
1
1E-006
V GS , Gate-to-Source Voltage (V)
6
D = 0.50
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T J , Temperature ( °C )
0
0.02
0.01
0.20
0.10
0.05
7
25
50
8
T J = 125°C
T J = 25°C
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
I D = 250µA
100 125 150 175
I D = 26A
9
10
t 1 , Rectangular Pulse Duration (sec)
0.0001
Fig 14. Maximum Avalanche Energy Vs. Temperature
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
0.001
1200
1000
R
800
600
400
200
140
120
100
1
R
Fig 16. Typical Repetitive peak Current vs.
80
60
40
20
1
0
0
25
25
τ
2
R
τ
2
2
R
2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Starting T J , Junction Temperature (°C)
50
50
R
τ
3
3
R
τ
3
3
Case temperature
τ
C
Case Temperature (°C)
τ
0.01
75
75
Ri (°C/W)
0.104678 0.000148
0.222607 0.001836
0.16298
100
100
ton= 1µs
Duty cycle = 0.25
τι (sec)
0.01527
TOP
BOTTOM
125
Half Sine Wave
Square Pulse
125
0.1
9.7A
5.8A
26A
150
I D
150
5
175
175

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