IRFB4610PBF International Rectifier, IRFB4610PBF Datasheet - Page 2

• Manufacturer Part Number: IRFB4610PBF
• Description: MOSFET N-CH 100V 73A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4610PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3550pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 190 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB4610PBF

Notes:

‚
ƒ
„
Static @ T
V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
V
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
above this value.
g
gs
gd
rr
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width
temperature.
I
2
R
SD
Symbol
Symbol
Symbol
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
= 25 , I
44A, di/dt
/ T
J
AS
Jmax
J
400µs; duty cycle
= 44A, V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
, starting T
J
660A/µs, V
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.39mH
DD
™
V
2%.
Parameter
Parameter
(BR)DSS
, T
J
175°C.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
––– 0.085 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
…
†
‡
ˆ
2.0
73
mended footprint and soldering techniques refer to application note #AN-994.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
oss
oss
oss
3550
–––
–––
–––
–––
–––
–––
–––
260
150
330
380
–––
–––
–––
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
1.5
2.1
11
90
20
36
18
87
53
70
35
42
44
65
while V
-200
DS
–––
250
200
–––
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
290
4.0
1.3
14
20
73
53
63
66
98
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
m
µA
nA
nC
nC
ns
pF
ns
V
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
f = 1MHz, open drain
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
= 44A
= 44A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 5.6
= V
= 100V, V
= 100V, V
= 50V, I
= 80V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 65V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
D
f
f
DSS
D
DS
DS
S
D
D
= 250µA
= 44A, V
= 100µA
= 44A
DSS
= 44A
GS
GS
.
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
= 0V
= 0V, T
.
V
I
di/dt = 100A/µs
F
R
= 44A
f
D
= 85V,
GS
= 1mA
J
= 0V
= 125°C
h
g
www.irf.com
™
, See Fig.11
, See Fig. 5
f
G
f
D
S