IRFB4610PBF International Rectifier, IRFB4610PBF Datasheet - Page 4

• Manufacturer Part Number: IRFB4610PBF
• Description: MOSFET N-CH 100V 73A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4610PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3550pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 190 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB4610PBF

4
1000.0
100.0
2.0
1.5
1.0
0.5
0.0
10.0
80
60
40
20
1.0
0.1
Fig 11. Typical C
0
25
0
0.2
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
T J = 175°C
0.4
V DS, Drain-to-Source Voltage (V)
50
V SD , Source-to-Drain Voltage (V)
20
T J , Junction Temperature (°C)
0.6
Case Temperature
Forward Voltage
0.8
75
T J = 25°C
40
OSS
1.0
100
Stored Energy
1.2
60
1.4
125
V GS = 0V
1.6
80
150
1.8
2.0
100
175
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
1000
1600
1200
100
125
120
115
110
105
100
0.1
800
400
10
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
20 40 60 80 100 120 140 160 180
75
1msec
DC
100µsec
100
TOP
BOTTOM
100
125
6.3A
4.6A
44A
I D
150
1000
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175