IRF2804S-7PPBF International Rectifier, IRF2804S-7PPBF Datasheet - Page 4

• Manufacturer Part Number: IRF2804S-7PPBF
• Description: MOSFET N-CH 40V 160A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2804S-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6930pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q3453559

14000
12000
10000
4
8000
6000
4000
2000
1000.0
100.0
0
10.0
1.0
0.1
Fig 5. Typical Capacitance vs.
1
Fig 7. Typical Source-Drain Diode
0.0
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
T J = 175°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
V SD , Source-to-Drain Voltage (V)
Ciss
Coss
Crss
Forward Voltage
0.8
T J = 25°C
f = 1 MHZ
10
1.2
1.6
V GS = 0V
2.0
100
2.4
10000
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
20
16
12
1
8
4
0
Fig 6. Typical Gate Charge vs.
0
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 160A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
50
Q G Total Gate Charge (nC)
1
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 32V
VDS= 20V
150
10
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200
100µsec
1msec
10msec
DC
100
250
1000
300