IRF2804S-7P International Rectifier, IRF2804S-7P Datasheet

IRF2804S-7P

Manufacturer Part Number

IRF2804S-7P

Description

MOSFET N-CH 40V 160A D2PAK7

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF2804STRR7PP.pdf (11 pages)

Specifications of IRF2804S-7P

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.6 mOhm @ 160A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

160A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

260nC @ 10V

Input Capacitance (ciss) @ Vds

6930pF @ 25V

Power - Max

330W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (6 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF2804S-7P

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF2804S-7P

Manufacturer:

IR/INFINEON

Quantity:

20 000

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Features

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

tures of this design are a 175°C junction operat-

ing temperature, fast switching speed and im-

proved repetitive avalanche rating . These fea-

tures combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applica-

tions.

HEXFET

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Parameter

AUTOMOTIVE MOSFET

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

@ 10V

(Package Limited)

300 (1.6mm from case )

HEXFET

See Fig.12a,12b,15,16

IRF2804S-7P

Typ.

0.50

–––

10 lbf•in (1.1N•m)

-55 to + 175

Max.

1360

1050

320

230

160

330

± 20

630

2.2

Power MOSFET

DS(on)

Max.

0.50

–––

DSS

= 160A

PD - 96891A

= 1.6mΩ

= 40V

Units

W/°C

°C/W

°C

Related parts for IRF2804S-7P

IRF2804S-7P Summary of contents

Page 1

... HEXFET is a registered trademark of International Rectifier. www.irf.com AUTOMOTIVE MOSFET G Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter 96891A IRF2804S-7P ® HEXFET Power MOSFET 40V DSS R = 1.6mΩ DS(on 160A D D Max. Units 320 A 230 160 1360 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage ...

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IRF2804S-7P International Rectifier, IRF2804S-7P Datasheet

IRF2804S-7P

Specifications of IRF2804S-7P

Available stocks

Related parts for IRF2804S-7P

IRF2804S-7P Summary of contents

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