IRF2804S-7P International Rectifier, IRF2804S-7P Datasheet - Page 3

• Manufacturer Part Number: IRF2804S-7P
• Description: MOSFET N-CH 40V 160A D2PAK7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2804S-7P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6930pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF2804S-7P

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1000.0
10000
100.0
1000
Fig 3. Typical Transfer Characteristics
10.0
Fig 1. Typical Output Characteristics
100
1.0
0.1
10
2.0
0.1
T J = 175°C
3.0
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.0
4.5V
1
T J = 25°C
V DS = 15V
≤ 60µs PULSE WIDTH
5.0
≤ 60µs PULSE WIDTH
Tj = 25°C
6.0
10
TOP
BOTTOM
7.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0
100
10000
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
1000
240
200
160
120
100
80
40
10
0
0.1
0
TOP
BOTTOM
20
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
40
1
60
V DS = 10V
380µs PULSE WIDTH
4.5V
≤ 60µs PULSE WIDTH
Tj = 175°C
80
10
100
T J = 25°C
T J = 175°C
120
3
140
100