IRFS4115-7PPBF International Rectifier, IRFS4115-7PPBF Datasheet - Page 3
![MOSFET N-CH 150V 105A D2PAK-7](/photos/13/92/139245/d2pak_to-263_6leads_sml.jpg)
IRFS4115-7PPBF
Manufacturer Part Number
IRFS4115-7PPBF
Description
MOSFET N-CH 150V 105A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFS4115TRL7PP.pdf
(9 pages)
Specifications of IRFS4115-7PPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.8 mOhm @ 63A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
105A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
5320pF @ 50V
Power - Max
380W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
105 A
Power Dissipation
380 W
Mounting Style
SMD/SMT
Gate Charge Qg
73 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFS4115-7PPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
8000
6000
4000
2000
1000
0.01
1000
100
0.1
100
10
0.1
10
0
1
1
0.1
Fig 3. Typical Transfer Characteristics
3.0
1
Fig 1. Typical Output Characteristics
4.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
T J = 175°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1
5.0V
C oss
5.0
C rss
C iss
≤60μs PULSE WIDTH
Tj = 25°C
V DS = 50V
≤ 60μs PULSE WIDTH
f = 1 MHZ
6.0
10
10
T J = 25°C
7.0
TOP
BOTTOM
100
8.0
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
9.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
12
10
8
4
0
1
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
0
Fig 2. Typical Output Characteristics
I D = 63A
I D = 63A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
20
Q G Total Gate Charge (nC)
1
V DS = 120V
V DS = 75V
V DS = 30V
5.0V
40
≤60μs PULSE WIDTH
Tj = 175°C
10
60
TOP
BOTTOM
100
80
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
1000
3