IRFS4115-7PPBF International Rectifier, IRFS4115-7PPBF Datasheet - Page 6

• Manufacturer Part Number: IRFS4115-7PPBF
• Description: MOSFET N-CH 150V 105A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4115-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.8 mOhm @ 63A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 5320pF @ 50V
• Power - Max: 380W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 105 A
• Power Dissipation: 380 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 16. Threshold Voltage Vs. Temperature
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
T J , Temperature ( °C )
0
di f / dt - (A / μs)
25
50
I F = 63A
V R = 127V
T J = 125°C
T J = 25°C
75
2400
2000
1600
1200
I D = 1.0A
I D = 1.0mA
I D = 250μA
100 125 150 175
800
400
0
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / μs)
I F = 63A
V R = 127V
T J = 125°C
T J = 25°C
2400
2000
1600
1200
800
400
50
40
30
20
10
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / μs)
di f / dt - (A / μs)
I F = 42A
V R = 127V
T J = 125°C
T J = 25°C
I F = 42A
V R = 127V
T J = 125°C
T J = 25°C
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