STW32N65M5 STMicroelectronics, STW32N65M5 Datasheet - Page 5
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STW32N65M5
Manufacturer Part Number
STW32N65M5
Description
MOSFET N-CH 650V 24A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STW32N65M5.pdf
(18 pages)
Specifications of STW32N65M5
Package / Case
TO-247
Mounting Type
Through Hole
Power - Max
150W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
72nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
24A
Drain To Source Voltage (vdss)
650V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
119 mOhm @ 12A, 10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW32N65M5
Manufacturer:
ST
Quantity:
30 000
STB/F/I/P/W32N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15316 Rev 3
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 24 A, V
= 24 A, di/dt = 100 A/µs
= 24 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 60 V (see
= 60 V, T
= 400 V, I
Figure
Figure
Test conditions
Test conditions
21)
21)
GS
j
D
GS
= 150 °C
= 14 A,
= 0
Figure
= 10 V
21)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
375
440
33
36
53
12
56
16
6
8
Max. Unit
Max
1.5
24
96
-
Unit
nC
nC
ns
ns
ns
ns
ns
ns
5/18
A
A
V
A
A