IRFPS3810PBF International Rectifier, IRFPS3810PBF Datasheet - Page 2

• Manufacturer Part Number: IRFPS3810PBF
• Description: MOSFET N-CH 100V 170A SUPER247
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFPS3810PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 390nC @ 10V
• Input Capacitance (ciss) @ Vds: 6790pF @ 25V
• Power - Max: 580W
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Current, Drain: 170 A
• Gate Charge, Total: 260 nC
• Package Type: Super-247™
• Polarization: N-Channel
• Power Dissipation: 580 W
• Resistance, Drain To Source On: 0.009 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 45 ns
• Time, Turn-on Delay: 24 ns
• Transconductance, Forward: 52 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 141 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 140 ns
• Gate Charge Qg: 260 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 270 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFPS3810PBF

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

‚
ƒ
Notes:
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
2
fs
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
(BR)DSS
R
max. junction temperature. (See fig. 11)
T
Starting T
SD
J
G
eff.
≤ 175°C
≤ 100A, di/dt ≤ 350A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Effective Output Capacitance …
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 0.27mH
AS
= 100A. (See Figure 12)
Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
…
†
„
C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
as C
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 10740 –––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
oss
Calculated continuous current based on maximum allowable
52
–––
–––
–––
–––
–––
––– 1640 2460
junction temperature. Package limitation current is 105A.
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
6790 –––
2470 –––
1180 –––
2210 –––
0.11 –––
while V
–––
––– 0.009
–––
–––
–––
–––
–––
––– -100
260
160
270
140
990
–––
–––
–––
220
5.0
49
24
45
13
170†
–––
–––
–––
250
100
390
250
–––
–––
–––
–––
–––
–––
330
5.0
1.3
25
74
DS
670
is rising from 0 to 80% V
V/°C
nH
µA
nA
nC
ns
nC
pF
ns
Ω
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 100A
= 100A
= 25°C, I
= 25°C, I
= 1.03Ω
= 0V, I
= 10V, I
= 10V, I
= 50V, I
= 100V, V
= 80V, V
= 30V
= -30V
= 80V
= 10V„
= 50V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
GS
Conditions
= 100A, V
= 100A
DSS
= 250µA
= 100A
= 100A „
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
= 0V, T
= 0V
www.irf.com
D
= 1mA
GS
J
= 150°C
G
= 0V „
G
S
+L
D
D
S
)
S
D