IRFPS3810PBF International Rectifier, IRFPS3810PBF Datasheet - Page 6
![MOSFET N-CH 100V 170A SUPER247](/photos/5/41/54106/21-super-247_sml.jpg)
IRFPS3810PBF
Manufacturer Part Number
IRFPS3810PBF
Description
MOSFET N-CH 100V 170A SUPER247
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFPS3810PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
390nC @ 10V
Input Capacitance (ciss) @ Vds
6790pF @ 25V
Power - Max
580W
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Current, Drain
170 A
Gate Charge, Total
260 nC
Package Type
Super-247™
Polarization
N-Channel
Power Dissipation
580 W
Resistance, Drain To Source On
0.009 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
24 ns
Transconductance, Forward
52 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
141 A
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
140 ns
Gate Charge Qg
260 nC
Minimum Operating Temperature
- 55 C
Rise Time
270 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFPS3810PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFPS3810PBF
Manufacturer:
IR
Quantity:
5 203
Part Number:
IRFPS3810PBF
Manufacturer:
IR
Quantity:
20 000
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
t p
I AS
D.U.T
Q
Charge
0.01 Ω
L
Q
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
3000
2500
2000
1500
1000
500
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
50
12V
V
GS
Same Type as D.U.T.
Vs. Drain Current
Current Regulator
J
.2µF
75
50KΩ
3mA
Current Sampling Resistors
.3µF
100
I
G
125
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
150
+
-
V
DS
100A
°
I D
41A
71A
175