HAT2164H-EL-E Renesas Electronics America, HAT2164H-EL-E Datasheet - Page 4

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HAT2164H-EL-E

Manufacturer Part Number
HAT2164H-EL-E
Description
MOSFET N-CH 30V 60A 5LFPAK
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HAT2164H-EL-E

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
60A
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
7600pF @ 10V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
LFPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2164H-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2164H
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.5.00 Sep 26, 2005 page 2 of 7
Item
Symbol
V
V
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
V
GS(off)
|y
DS(on)
DS(on)
Qg
Rg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
±20
0.8
30
78
7600
1050
0.82
Typ
130
470
2.5
3.0
0.5
50
22
10
18
60
65
15
40
Max
1.07
±10
3.1
4.4
2.3
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
V
I
V
V
Rg = 4.7
IF = 60 A, V
IF = 60 A, V
di
D
G
D
D
D
D
GS
DS
DS
DS
DD
GS
DD
F
= 10 mA, V
= 30 A, V
= 30 A, V
= 30 A, V
= 60 A
= ±100 A, V
/ dt = 100 A/ s
= ±16 V, V
= 30 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, I
10 V, R
Test Conditions
GS
GS
DS
GS
GS
D
GS
GS
GS
GS
D
L
= 10 V
= 4.5 V
= 10 V
= 30 A,
= 0
= 0
DS
= 0.33 ,
= 1 mA
DS
= 0
= 0
= 0, f = 1 MHz
= 4.5 V,
= 0
= 0
Note4
(Ta = 25°C)
Note4
Note4
Note4

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