HAT2164H-EL-E Renesas Electronics America, HAT2164H-EL-E Datasheet - Page 5

• Manufacturer Part Number: HAT2164H-EL-E
• Description: MOSFET N-CH 30V 60A 5LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2164H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 7600pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

HAT2164H
Main Characteristics
Rev.5.00 Sep 26, 2005 page 3 of 7
100
250
200
150
100
50
40
30
20
10
80
60
40
20
0
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4 V
10 V
Gate to Source Voltage
4
2
50
Pulse Test
4
8
100
12
6
Pulse Test
Tc (°C)
150
I
D
V
V
16
8
= 50 A
GS
DS
3.2 V
3.0 V
2.8 V
2.6 V
10 A
20 A
(V)
(V)
200
10
20
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
80
60
40
20
10
1
5
2
1
0
0.1
1
Drain to Source Voltage
Gate to Source Voltage
Operation in
this area is
limited by R
Pulse Test
V
Pulse Test
Tc = 25°C
1 shot Pulse
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
0.3
= 10 V
3
Tc = 75°C
Drain Current
1
vs. Drain Current
10
1
DS(on)
2
30
3
3
100
V
I
10
-25°C
D
25°C
GS
(A)
V
V
= 4.5 V
300
4
DS
30
GS
10 V
(V)
(V)
1000
100
5