NTR4171PT1G ON Semiconductor, NTR4171PT1G Datasheet - Page 2

• Manufacturer Part Number: NTR4171PT1G
• Description: MOSFET P-CH 30V 2.2A SOT23
• Manufacturer: ON Semiconductor

Specifications of NTR4171PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 15.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 15V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS, V
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
GS
= 4.5 V (Note 4)
V
V
V
Symbol
V
Q
Q
GS(TH)
R
Q
Q
(BR)DSS
(BR)DSS
GS(TH)
t
t
t
t
I
C
G(TOT)
Q
G(TOT)
Q
I
DS(on)
Q
Q
Q
C
C
V
g
d(on)
d(off)
d(on)
d(off)
DSS
GSS
G(TH)
G(TH)
t
/T
R
RR
t
t
oss
t
t
t
t
FS
rss
GS
GD
GS
GD
SD
RR
iss
a
b
G
r
f
r
f
J
(T
/T
J
J
= 25°C unless otherwise noted)
http://onsemi.com
V
V
V
I
D
GS
GS
GS
= −250 mA, Reference to 25°C
V
V
V
V
= 0 V, V
= 0 V, V
V
V
V
V
V
V
GS
GS
GS
GS
V
= 0 V, I
V
V
GS
GS
2
GS
DS
DS
GS
I
I
GS
GS
D
D
GS
= −4.5 V, V
= −4.5 V, V
dI
= −10 V, V
= −10 V, V
= −3.5 A, R
= −3.5 A, R
Test Condition
= −4.5 V, I
= −2.5 V, I
= −5.0 V, I
= 0 V, V
= V
= −10 V, I
= 0 V, I
SD
= 0 V, f = 1.0 MHz,
= 0 V, I
V
I
I
D
D
S
DS
DS
DS
/d
DS
= −1.0 A, T
= −3.5 A
= −3.5 A
t
= −24 V, T
= −24 V, T
, I
= −15 V
= 100 A/ms
D
GS
D
S
= −250 mA
DS
DS
DS
DS
= −1.0 A,
= −250 mA
D
D
D
D
G
G
= "12 V
= −2.2 A
= −1.8 A
= −2.2 A
= −1.0 A
= −15 V,
= −15 V,
= −15 V,
= −15 V,
= 6 W
= 6 W
J
J
J
= 25°C
= 25°C
= 85°C
−0.7
Min
−30
−1.15
15.6
−0.8
Typ
720
3.5
7.0
0.7
1.6
2.6
7.4
0.7
1.6
2.6
6.1
8.0
9.0
4.0
8.0
24
50
60
90
95
65
32
14
16
25
22
14
10
11
Max
−1.0
−5.0
±0.1
−1.4
−1.2
150
110
75
mV/°C
mV/°C
Units
mW
nC
nC
nC
mA
mA
pF
ns
ns
ns
W
V
V
S
V