NTR4171PT1G ON Semiconductor, NTR4171PT1G Datasheet - Page 4

• Manufacturer Part Number: NTR4171PT1G
• Description: MOSFET P-CH 30V 2.2A SOT23
• Manufacturer: ON Semiconductor

Specifications of NTR4171PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 15.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 15V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
1100
900
800
700
600
500
400
300
200
100
100
1.0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
0
−50
1.0
0
C
C
C
Figure 9. Resistive Switching Time Variation
V
V
I
rss
D
iss
oss
GS
DD
= −3.5 A
−25
−V
= −10 V
= −15 V
5.0
DS
Figure 7. Capacitance Variation
Figure 11. Threshold Voltage
, DRAIN−TO−SOURCE VOLTAGE (V)
0
R
G
T
vs. Gate Resistance
, GATE RESISTANCE (W)
J
10
, TEMPERATURE (°C)
25
15
10
50
75
20
I
TYPICAL CHARACTERISTICS
D
100
V
T
f = 1 MHz
= −250 mA
J
GS
= 25°C
25
= 0 V
125
http://onsemi.com
t
t
t
t
d(on)
d(off)
r
f
30
100
150
4
8.0
6.0
4.0
2.0
12
10
0
0
−V
Q
1.0
0.1
5.0
10
30
25
20
15
10
GS
DS
0
0.3
0.001
2.0
Figure 10. Diode Forward Voltage vs. Current
Drain−to−Source Voltage vs. Total Charge
Figure 12. Single Pulse Maximum Power
0.4
Q
GD
−V
4.0
0.01
T
J
SD
T
Figure 8. Gate−to−Source and
= 150°C
0.5
Q
J
, SOURCE−TO−DRAIN VOLTAGE (V)
G
= 125°C
6.0
, TOTAL GATE CHARGE (nC)
SINGLE PULSE TIME (s)
0.6
0.1
Q
T
Dissipation
8.0
0.7
1.0
10
T
0.8
J
= −55°C
V
T
I
D
T
J
DS
12
J
0.9
−V
10
= −3.5 A
= 25°C
= 25°C
= −15 V
GS
1.0
14
100
1.1
16
16
14
12
10
8.0
6.0
4.0
2.0
0
1000
1.2