NTR0202PLT1G ON Semiconductor, NTR0202PLT1G Datasheet

MOSFET P-CH 20V 400MA SOT-23

NTR0202PLT1G

Manufacturer Part Number
NTR0202PLT1G
Description
MOSFET P-CH 20V 400MA SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of NTR0202PLT1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 200mA, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
2.3V @ 250µA
Gate Charge (qg) @ Vgs
2.18nC @ 10V
Input Capacitance (ciss) @ Vds
70pF @ 5V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.4 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.8Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±20V
Drain Current (max)
400mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTR0202PLT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTR0202PLT1G
Manufacturer:
ON
Quantity:
9 000
Part Number:
NTR0202PLT1G
Manufacturer:
ON Semiconductor
Quantity:
12 550
Part Number:
NTR0202PLT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR0202PLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTR0202PL
Power MOSFET
−20 V, −400 mA, P−Channel
SOT−23 Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Current @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Thermal Resistance − Junction−to−Ambient
Source Current (Body Diode)
Maximum Lead Temperature for Soldering
Low R
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Packages are Available
DC−DC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
Pulsed Drain Current (t
Purposes, 1/8″ from case for 10 s
R
R
DSon
DSon
DS(on)
= 0.80 W, V
= 1.10 W, V
Provides Higher Efficiency and Extends Battery Life
Rating
(T
GS
GS
p
J
≤ 10 ms)
A
= 25°C unless otherwise noted)
= −10 V
= −4.5 V
= 25°C (Note 1)
A
= 25°C
Symbol
T
V
R
J
V
I
P
, T
T
DSS
DM
I
I
qJA
GS
D
S
D
L
stg
− 55 to
Value
$20
−0.4
−1.0
−20
225
150
556
260
0.4
1
°C/W
Unit
mW
°C
°C
V
V
A
A
†For information on tape and reel specifications,
NTR0202PLT1
NTR0202PLT1G SOT−23
NTR0202PLT3
NTR0202PLT3G SOT−23
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 318
(BR)DSS
STYLE 21
−20 V
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
Device
SOT−23
upon manufacturing location.
PL
M
G
ORDERING INFORMATION
G
http://onsemi.com
550 mW @ −10 V
= Specific Device Code
= Date Code*
= Pb−Free Package
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
R
DS(on)
MARKING DIAGRAM &
P−Channel
PIN ASSIGNMENT
Publication Order Number:
Gate
Typ
D
S
1
10,000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
Drain
PL M G
3
G
Shipping
Source
NTR0202PL/D
2
−400 mA
I
D
MAX

Related parts for NTR0202PLT1G

NTR0202PLT1G Summary of contents

Page 1

... L *Date Code orientation may vary depending upon manufacturing location. Device NTR0202PLT1 NTR0202PLT1G SOT−23 NTR0202PLT3 NTR0202PLT3G SOT−23 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( −10 mA (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (V = − 25° ...

Page 3

V = − −6 V −5.5 V 0.5 −5 V 0.25 −4 0.25 0.5 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 1 150° 25°C J ...

Page 4

C iss 80 C rss −V − −GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 V = − −0 ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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