NTR0202PLT1G ON Semiconductor, NTR0202PLT1G Datasheet - Page 4

• Manufacturer Part Number: NTR0202PLT1G
• Description: MOSFET P-CH 20V 400MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR0202PLT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 200mA, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.18nC @ 10V
• Input Capacitance (ciss) @ Vds: 70pF @ 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.8Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 400mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR0202PLT1GOSTR

100
100
80
60
40
20
10
0
1
−GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
10
1
C
C
V
I
V
Figure 9. Resistive Switching Time Variation
iss
D
rss
DD
GS
t
= −0.2 A
f
−V
= −16 V
= −4.5 V
t
r
Figure 7. Capacitance Variation
5
GS
R
t
d(off)
versus Gate Resistance
G
, GATE RESISTANCE (W)
0
t
d(on)
(VOLTS)
−V
10
5
DS
C
C
C
rss
oss
10
iss
T
J
15
= 25°C
http://onsemi.com
100
20
4
0.75
0.25
7.5
2.5
0.5
10
5
0
1
0
0
0
V
T
Q
−V
Figure 10. Diode Forward Voltage versus
J
GS
0.1
1
C
Drain−to−Source Voltage versus Total
= 25°C
SD
rss
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
0.2
Q
0.5
G
Q
, TOTAL GATE CHARGE (nC)
2
0.3
Current
Charge
0.4
1
Q
C
T
iss
0.5
0.6
1.5
T
I
D
J
0.7
= −0.4 A
= 25°C
0.8
2
0.9