NTGS3441T1G ON Semiconductor, NTGS3441T1G Datasheet - Page 2
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NTGS3441T1G
Manufacturer Part Number
NTGS3441T1G
Description
MOSFET P-CH 20V 1.65A 6-TSOP
Manufacturer
ON Semiconductor
Datasheet
1.NTGS3441T1G.pdf
(6 pages)
Specifications of NTGS3441T1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 3.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.65A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
480pF @ 5V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTGS3441T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTGS3441T1G
Manufacturer:
ON
Quantity:
33 000
Company:
Part Number:
NTGS3441T1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NTGS3441T1G
Manufacturer:
ONSemiconduc
Quantity:
2 070
Part Number:
NTGS3441T1G
Manufacturer:
ON/安森美
Quantity:
20 000
4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge are mandatory.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
BODY−DRAIN DIODE RATINGS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate−Body Leakage Current
Gate Threshold Voltage
Static Drain−Source On−State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Diode Forward On−Voltage
Diode Forward On−Voltage
Reverse Recovery Time
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
GS
GS
GS
DS
GS
GS
DS
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= −8.0 Vdc, V
= +8.0 Vdc, V
= V
= −4.5 Vdc, I
= −2.5 Vdc, I
= −10 Vdc, I
GS
, I
D
D
= −250 mAdc)
DS
DS
= −10 mA)
D
D
D
DS
DS
= −20 Vdc, T
= −20 Vdc, T
= −3.3 Adc)
= −3.3 Adc)
= −2.9 Adc)
= 0 Vdc)
= 0 Vdc)
J
J
Characteristic
= 25°C)
= 70°C)
(T
A
= 25°C unless otherwise noted) (Notes 4 & 5)
(V
(I
(V
(V
S
V
DS
(I
(I
DD
= −1.6 Adc, dI
DS
S
S
http://onsemi.com
GS
= −10 Vdc, V
= −1.6 Adc, V
= −3.3 Adc, V
= −20 Vdc, I
= −5.0 Vdc, V
= −4.5 Vdc, R
I
D
f = 1.0 MHz)
= −3.3 Adc)
2
S
GS
/dt = 100 A/ms)
D
GS
GS
GS
= −1.6 Adc,
g
= −4.5 Vdc,
= 0 Vdc)
= 0 Vdc)
= 6.0 W)
= 0 Vdc,
V
Symbol
R
V
(BR)DSS
t
t
I
I
I
C
DS(on)
C
V
V
GS(th)
C
Q
Q
Q
g
d(on)
d(off)
DSS
GSS
GSS
t
FS
oss
t
t
SD
SD
rss
iss
rr
tot
gs
gd
r
f
−0.45
Min
−20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−1.05
0.069
0.117
−0.88
−0.98
23.5
Typ
480
265
100
6.8
6.2
1.3
2.5
13
27
24
30
−
−
−
−
−
−1.50
0.090
0.135
−100
Max
−1.0
−5.0
−1.2
100
25
45
50
45
14
60
−
−
−
−
−
−
−
−
Mhos
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
W