UPA1918TE-T1-AT Renesas Electronics America, UPA1918TE-T1-AT Datasheet - Page 5

• Manufacturer Part Number: UPA1918TE-T1-AT
• Description: MOSFET 60V P-CH SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1918TE-T1-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 143 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 666pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
-0.01
-100
-0.1
120
100
-10
80
60
40
20
-1
0
-0.1
0
FORWARD BIAS SAFE OPERATING AREA
R
(V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Single Pulse
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
DS(on)
GS
25
V
= 10 V)
T
I
DS
D(DC)
A
Limited
- Ambient Temperature - C
10 ms
- Drain to Source Voltage - V
50
100 ms
1000
-1
100
10
75
1
1 m
5 s
I
D(pulse)
Single Pulse
100
-10
A
PW = 100 s
125
= 25°C)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
150
1 ms
W ithout board
Data Sheet G15926EJ1V0DS
-100
175
100 m
PW - Pulse Width - s
1
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
2.25
1.75
1.25
0.75
0.25
1.5
0.5
2
1
0
0
10
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
- Ambient Temperature - C
50
100
75
100
1000
125
PA1918
150
175
3