UPA1918TE-T2-AT Renesas Electronics America, UPA1918TE-T2-AT Datasheet

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UPA1918TE-T2-AT

Manufacturer Part Number
UPA1918TE-T2-AT
Description
MOSFET 60V P-CH SC-95
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPA1918TE-T2-AT

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
143 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
666pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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UPA1918TE-T2-AT Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 4

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 5

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA -100 PW = ...

Page 6

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -15 Pulsed - -0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2 ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 T = 125° 4 Pulsed 250 75°C 200 25°C 150 25°C 100 50 -0.01 -0 Drain Current - A D DRAIN TO ...

Page 8

SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed 0.1 0.01 0.4 0.6 0 Source to Drain Voltage - V F(S-D) 6 1.2 1.4 Data Sheet G15926EJ1V0DS PA1918 ...

Page 9

Data Sheet G15926EJ1V0DS PA1918 7 ...

Page 10

The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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