UPA1918TE-T2-AT Renesas Electronics America, UPA1918TE-T2-AT Datasheet - Page 3

• Manufacturer Part Number: UPA1918TE-T2-AT
• Description: MOSFET 60V P-CH SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1918TE-T2-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 143 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 666pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
Marking: TS
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
directly by a 4.0 V power source.
switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
The PA1918 is a switching device, which can be driven
This device features a low on-state resistance and excellent
4.0 V drive available
Low on-state resistance
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on FR-4 board, t
PA1918TE
G15926EJ1V0DS00 (1st edition)
June 2002 NS CP(K)
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
= 179 m
= 143 m
= 190 m
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
Note1
A
= 25°C)
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note2
DS
GS
GS
GS
GS
= 0 V)
= 0 V)
SC-95 (Mini Mold Thin Type)
= –4.5 V, I
= –10 V, I
= –4.0 V, I
1%
5 sec.
PACKAGE
A
D
D
D
= 25°C)
= –2.0 A)
= –2.0 A)
= –2.0 A)
I
D(pulse)
I
V
V
D(DC)
P
P
T
T
FOR SWITCHING
DSS
GSS
stg
DATA SHEET
T1
T2
ch
–55 to +150
MOS FIELD EFFECT TRANSISTOR
m3.5
–60
m20
m14
150
0.2
2.0
0.32
W
W
°C
°C
V
V
A
A
+0.1
–0.05
PACKAGE DRAWING (Unit: mm)
6
1
0.95
2.9 ±0.2
1.9
5
2
EQUIVALENT CIRCUIT
0.95
Gate
Gate
Protection
Diode
1, 2, 5, 6 : Drain
3
4
4
3
PA1918
: Gate
: Source
Source
Drain
©
0.9 to 1.1
0.65
Body
Diode
0.16
0 to 0.1
+0.1
–0.06
2002