NTLJS3113PTAG ON Semiconductor, NTLJS3113PTAG Datasheet - Page 2

• Manufacturer Part Number: NTLJS3113PTAG
• Description: MOSFET P-CH 20V 3.5A 6-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJS3113PTAG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1329pF @ 16V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm
THERMAL RESISTANCE RATINGS
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
DRAIN-SOURCE DIODE CHARACTERISTICS
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State Min Pad (Note 4)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
Drain-to-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Parameter
Parameter
V
V
V
(BR)DSS
Symbol
V
Q
GS(TH)
R
Q
t
(BR)DSS
C
t
C
d(OFF)
GS(TH)
I
C
G(TOT)
Q
I
DS(on)
Q
d(ON)
Q
V
g
DSS
GSS
G(TH)
t
R
OSS
RSS
RR
t
t
FS
ISS
t
t
GS
GD
SD
RR
a
b
G
r
f
/T
/T
J
J
(T
J
= 25°C unless otherwise noted)
V
V
http://onsemi.com
DS
GS
NTLJS3113P
V
= -16 V, V
V
V
= 0 V, IS = -1.0 A
GS
I
V
GS
GS
D
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
DS
GS
= -250 mA, Ref to 25°C
GS
GS
GS
GS
= 0 V, d
= -4.5 V, V
= -4.5 V, V
= -3.0 A, R
Test Conditions
2
= V
= -16 V, I
= 0 V, V
= 0 V, I
= 0 V, f = 1.0 MHz,
= -4.5, I
= -2.5, I
= -1.8, I
= -1.5, I
V
I
I
D
S
DS
DS
GS
= -3.0 A
= -1.0 A
ISD
, I
= -16 V
= 0 V
D
D
GS
/d
D
D
D
D
= -250 mA
DD
D
DS
= -250 mA
G
t
= -3.0 A
= -3.0 A
= -2.0 A
= -1.8 A
= ±8.0 V
= 100 A/ms,
= -3.0 A
= 3.0 W
= -16 V,
= -10 V,
T
T
T
T
2
J
J
J
J
, 2 oz Cu).
= 125°C
= 25°C
= 85°C
= 25°C
Symbol
R
R
R
qJA
qJA
qJA
-0.45
Min
-20
-10.1
-0.67
-0.78
-0.67
1329
2.68
14.4
17.5
56.5
70.8
14.3
56.4
Typ
213
120
5.9
1.5
2.2
2.9
6.9
32
44
67
90
13
60
44
Max
180
65
38
Max
-1.0
±1.0
-1.0
15.7
-1.2
-10
200
106
40
50
75
°C/W
Unit
mV/°C
mV/°C
Unit
mW
nC
nC
mA
mA
pF
ns
ns
W
V
V
S
V