NTLJS3113PTAG ON Semiconductor, NTLJS3113PTAG Datasheet - Page 4

• Manufacturer Part Number: NTLJS3113PTAG
• Description: MOSFET P-CH 20V 3.5A 6-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJS3113PTAG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1329pF @ 16V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
2800
2400
2000
1600
1200
100
800
400
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
10
1
0
1
5
C
V
I
V
C
D
rss
DD
GS
iss
= -3.0 A
V
GS
= -15 V
= -4.5 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0
Figure 7. Capacitance Variation
R
V
G
DS
V
, GATE RESISTANCE (OHMS)
DS
= V
C
TYPICAL PERFORMANCE CURVES
oss
GS
5
= 0 V
10
0.01
100
0.1
10
1
0.1
10
See Note 2, Page 1
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
C
-V
= 25°C
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
15
T
R
THERMAL LIMIT
PACKAGE LIMIT
J
DS(on)
= 25°C
Safe Operating Area
http://onsemi.com
t
t
t
t
d(on)
d(off)
1
f
r
NTLJS3113P
LIMIT
100
20
4
5
4
3
2
1
0
0
2.5
1.5
0.5
Q
(T
V
3
2
1
0
Figure 8. Gate-To-Source and Drain-To-Source
GS
DS
0
Figure 10. Diode Forward Voltage versus Current
J
10
= 25°C unless otherwise noted)
V
GS
-V
SD
= 0 V
1 ms
100 ms
10 ms
dc
Q
Q
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.2
Voltage versus Total Charge
GD
G
, TOTAL GATE CHARGE (nC)
4
T
J
100
= 150°C
0.4
QT
8
0.6
V
GS
T
J
= 25°C
I
T
D
J
= -3.0 A
= 25°C
12
0.8
20
16
12
4
0
8
1.0