UPA507TE-T1-A Renesas Electronics America, UPA507TE-T1-A Datasheet

no-image

UPA507TE-T1-A

Manufacturer Part Number
UPA507TE-T1-A
Description
MOSFET/SCHOTTKY P-CH 20V SC-95
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPA507TE-T1-A

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
85 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
4.7nC @ 4V
Input Capacitance (ciss) @ Vds
380pF @ 10V
Power - Max
570mW
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

Related parts for UPA507TE-T1-A

UPA507TE-T1-A Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE DESCRIPTION μ The PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent ...

Page 4

MOS FET ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation Channel Temperature μ Notes 1. ...

Page 5

MOS FET ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Page 6

MOS FET TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA - 100 ...

Page 7

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 8 Pulsed = −4 −2 −1 0.2 - 0.4 - 0 Drain to Source ...

Page 8

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 = −1 Pulsed V = −1 150 −2.5 V −4.5 V 100 100 - Channel Temperature - ° ...

Page 9

SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (T FORWARD CURRENT vs. FORWARD VOLTAGE 10 Pulsed 125°C A 75°C 25°C −25°C 0.1 0.01 0 0.2 0.4 0 Forward Voltage - V F TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 1000 ...

Page 10

The information in this document is current as of December, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

Related keywords