UPA507TE-T1-A Renesas Electronics America, UPA507TE-T1-A Datasheet - Page 3

• Manufacturer Part Number: UPA507TE-T1-A
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA507TE-T1-A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.7nC @ 4V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

<R>
Document No. G16626EJ2V0DS00 (2nd edition)
Date Published December 2006 NS CP(K)
Printed in Japan
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in the external electrode and other parts).
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
DESCRIPTION
FEATURES
• 1.8 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
• Low forward voltage (Schottky barrier diode)
by a 1.8 V power source.
resistance and excellent switching characteristics and a low forward
voltage Schottky barrier diode, and is suitable for applications such
as DC/DC converter of portable machine and so on.
The
This device incorporates a MOS FET, which features a low on-state
R
R
R
V
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μ
μ
μ
μ
F
DS(on)1
DS(on)2
DS(on)3
PA507TE-T1-A
PA507TE-T2-A
PA507TE-T1-AT
PA507TE-T2-AT
= 0.35 V TYP. (I
PART NUMBER
μ
PA507TE is a switching device, which can be driven directly
= 68 mΩ TYP. (V
= 84 mΩ TYP. (V
= 109 mΩ TYP. (V
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
caution for electrostatic discharge.
V
ESD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
± 100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
Note
Note
Note
Note
F
= 1.0 A)
GS
GS
GS
LEAD PLATING
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
Pure Sn
Sn-Bi
MOS FET WITH SCHOTTKY BARRIER DIODE
The mark <R> shows major revised points.
D
D
D
= −1.0 A)
= −1.0 A)
= −1.0 A)
FOR SWITCHING
DATA SHEET
8 mm Embossed Taping 3000 p/reel
8 mm Embossed Taping 3000 p/reel
PACKING
PACKAGE DRAWING (Unit: mm)
PIN CONNECTION (Top View)
0.32
1
5
+0.1
–0.05
SC-95_5pin (Mini Mold Thin Type)
SC-95_5pin (Mini Mold Thin Type)
μ
5
1
2
0.95
2.9 ±0.2
PA507TE
1.9
2
PACKAGE
0.95
4
3
4
3
1: Gate
2: Source
3: Anode
4: Cathode
5: Drain
0.9 to 1.1
0.65
0.16
0 to 0.1
2003
+0.1
–0.06