NTD4963N-1G ON Semiconductor, NTD4963N-1G Datasheet - Page 3

• Manufacturer Part Number: NTD4963N-1G
• Description: MOSFET N-CH 30V 8.1A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4963N-1G

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Mounting Type: Through Hole
• Power - Max: 1.1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 16.2nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.6 mOhms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 35.7 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD4963NT4G
NTD4963N−1G
NTD4963N−35G
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance (Note 7)
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 7)
Gate Inductance (Note 7)
Gate Resistance
Device
Parameter
IPAK Trimmed Lead
(T
(Pb−Free)
(Pb−Free)
(Pb−Free)
J
Package
= 25°C unless otherwise specified)
DPAK
IPAK
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
D
G
http://onsemi.com
V
GS
V
V
I
3
GS
GS
S
I
D
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 11.5 V, V
= 15 A, R
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
Shipping
Min
†
0.0164
0.96
0.83
2.49
1.88
3.46
Typ
7.0
1.0
17
20
17
2
9
8
6
Max
1.2
Unit
nH
ns
ns
nC
W
V