NTD4963N-1G ON Semiconductor, NTD4963N-1G Datasheet - Page 4

• Manufacturer Part Number: NTD4963N-1G
• Description: MOSFET N-CH 30V 8.1A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4963N-1G

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Mounting Type: Through Hole
• Power - Max: 1.1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 16.2nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.6 mOhms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 35.7 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.9E−02
1.8E−02
1.7E−02
1.6E−02
1.5E−02
1.4E−02
1.3E−02
1.2E−02
1.1E−02
1.0E−02
2E−02
9E−03
8E−03
7E−03
6E−03
5E−03
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
3
Figure 3. On−Resistance vs. Gate−to−Source
−25
Figure 1. On−Region Characteristics
I
V
Figure 5. On−Resistance Variation with
D
V
GS
DS
= 30 A
V
4
1
GS
T
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
4.6 V thru 10 V
5
25
2
Temperature
Voltage
6
T
J
50
= 25°C
3
7
75
TYPICAL PERFORMANCE CURVES
8
100
V
4
GS
I
T
D
J
= 30 A
= 25°C
= 4.4 V
125
http://onsemi.com
9
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
2.8 V
10
150
5
4
20E−03
15E−03
10E−03
10,000
0E+00
5E−03
1,000
100
0.1
10
60
50
40
30
20
10
1
0
5
1
10
Figure 4. On−Resistance vs. Drain Current and
T
Figure 6. Drain−to−Source Leakage Current
V
J
V
GS
1.5
= 25°C
DS
15
= 0 V
V
V
= 10 V
Figure 2. Transfer Characteristics
DS
GS
10
T
, DRAIN−TO−SOURCE VOLTAGE (V)
2
J
, GATE−TO−SOURCE VOLTAGE (V)
20
= 125°C
T
I
J
D
2.5
, DRAIN CURRENT (A)
= 25°C
25
Gate Voltage
15
vs. Voltage
3
T
T
V
T
V
J
J
J
GS
30
GS
T
= 150°C
= 125°C
= 25°C
J
3.5
= 4.5 V
= −55°C
= 10 V
20
35
4
40
4.5
25
45
5
5.5
50
30