2SK3919-ZK-E1-AY Renesas Electronics America, 2SK3919-ZK-E1-AY Datasheet
2SK3919-ZK-E1-AY
Specifications of 2SK3919-ZK-E1-AY
Related parts for 2SK3919-ZK-E1-AY
2SK3919-ZK-E1-AY Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance R = 5.6 mΩ MAX DS(on)1 GS • Low 2050 pF TYP ...
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... F(S- µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ µs ≤ Duty Cycle 1% ch Data Sheet D17078EJ4V0DS 2SK3919 MIN. TYP. MAX. UNIT µ ±100 nA 2.0 2.5 3 4.5 5.6 mΩ 6.8 13.7 mΩ 2050 pF 460 pF 330 0. 90% ...
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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 100 R R th(ch- 100 Pulse Width - s Data Sheet D17078EJ4V0DS 2SK3919 50 75 100 125 150 175 - Case Temperature - ° 125°C/W th(ch-A) = 3.47°C/W Single pulse 100 1000 3 ...
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... DRAIN CURRENT 100 = −55° 0.1 0.1 150 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 0 V Data Sheet D17078EJ4V0DS 2SK3919 25°C 75°C 125°C 150° Pulsed Gate to Source Voltage - V GS 25°C 75°C 125°C 150° Pulsed 1 10 ...
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... MHz 100 0.01 0.1 200 V - Drain to Source Voltage - V DS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 Diode Forward Current - A F Data Sheet D17078EJ4V0DS 2SK3919 C iss C oss C rss 1 10 100 ( 12 Gate Charge - nC di/dt = 100 A/µ 100 ...
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... SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 12 Ω → Starting T = 25° 0.01 0 Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 Starting T Data Sheet D17078EJ4V0DS 2SK3919 Ω → ≤ 100 125 150 - Starting Channel Temperature - °C ch ...
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... TO-252 (MP-3ZK) 0.5 ±0.1 6.5±0.2 5.1 TYP. 4.3 MIN 1.14 MAX. 2.3 2.3 Data Sheet D17078EJ4V0DS 2SK3919 2.3±0.1 0.5±0.1 No Plating No Plating 0 to 0.25 0.76±0.12 0.5±0.1 1.0 1. Gate 2. Drain 3. Source 4. Fin (Drain) 7 ...
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... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3919 M8E 02. 11-1 ...