2SK3919 NEC, 2SK3919 Datasheet

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2SK3919

Manufacturer Part Number
2SK3919
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC
Datasheet

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Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Low on-state resistance
• Low C
• 5 V drive available
ABSOLUTE MAXIMUM RATINGS (T
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The 2SK3919 is N-channel MOS FET device that
R
DS(on)1
2. Starting T
iss
= 5.6 mΩ MAX. (V
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 2050 pF TYP.
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
Note2
DS
C
GS
GS
= 25°C)
= 0 V)
= 0 V)
= 10 V, I
DD
N-CHANNEL POWER MOS FET
= 12.5 V, R
D
The mark
= 32 A)
A
I
= 25°C)
I
D(pulse)
V
V
G
DATA SHEET
D(DC)
P
P
T
E
T
I
GSS
DSS
AS
= 25 Ω, V
stg
AS
T1
T2
ch
SWITCHING
shows major revised points.
−55 to +150
MOS FIELD EFFECT TRANSISTOR
GS
±256
±20
±64
150
1.0
25
36
27
73
= 20 → 0 V
ORDERING INFORMATION
mJ
°C
°C
W
W
PART NUMBER
V
V
A
A
A
2SK3919-ZK
2SK3919
(TO-251)
(TO-252)
2SK3919
TO-252 (MP-3ZK)
TO-251 (MP-3)
PACKAGE
2004

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2SK3919 Summary of contents

Page 1

... DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance R = 5.6 mΩ MAX DS(on)1 GS • Low 2050 pF TYP ...

Page 2

... µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ µs ≤ Duty Cycle 1% ch Data Sheet D17078EJ4V0DS 2SK3919 MIN. TYP. MAX. UNIT µ ±100 nA 2.0 2.5 3 4.5 5.6 mΩ 6.8 13.7 mΩ 2050 pF 460 pF 330 pF 16 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 100 R R th(ch- 100 Pulse Width - s Data Sheet D17078EJ4V0DS 2SK3919 50 75 100 125 150 175 - Case Temperature - ° 125°C/W th(ch-A) = 3.47°C/W Single pulse 100 1000 3 ...

Page 4

... 0.1 0.1 150 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 0 V Data Sheet D17078EJ4V0DS 2SK3919 25°C 75°C 125°C 150° Pulsed Gate to Source Voltage - V GS 25°C 75°C 125°C 150° ...

Page 5

... 100 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 Diode Forward Current - A F Data Sheet D17078EJ4V0DS 2SK3919 C iss C oss C rss 1 10 100 ( 12 ...

Page 6

... Starting T = 25° 0.01 0 Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 Starting T Data Sheet D17078EJ4V0DS 2SK3919 Ω → ≤ 100 125 150 - Starting Channel Temperature - °C ch ...

Page 7

... Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 2) TO-252 (MP-3ZK) 0.5 ±0.1 6.5±0.2 5.1 TYP. 4.3 MIN 1.14 MAX. 2.3 2.3 Data Sheet D17078EJ4V0DS 2SK3919 2.3±0.1 0.5±0.1 No Plating No Plating 0 to 0.25 0.76±0.12 0.5±0.1 1.0 1. Gate 2. Drain 3. Source 4. Fin (Drain) 7 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3919 M8E 02. 11-1 ...

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