UPA807T NEC, UPA807T Datasheet

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UPA807T

Manufacturer Part Number
UPA807T
Description
6-pin small MM high-frequency double transistor
Manufacturer
NEC
Datasheet
Document No. P12153EJ2V0DS00 (2nd edition)
Date Published November 1996 N
Printed in Japan
(Previous No. ID-3641)
FEATURES
• Low Current, High Gain
• A Super Mini Mold Package Adopted
• Built-in 2 Transistors (2
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
PART NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PA807T
PA807T-T1
|S
|S
Remark If you require an evaluation sample, please contact an
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
21e
21e
|
|
2
2
PARAMETER
= 9 dB TYP. @V
= 8.5 dB TYP. @V
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
QUANTITY
NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
CE
CE
2SC5179)
= 2 V, I
SYMBOL
= 1 V, I
V
V
V
T
P
CBO
CEO
EBO
I
T
stg
C
T
j
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
C
= 7 mA, f = 2 GHz
C
= 5 mA, f = 2 GHz
30 in 1 element
60 in 2 elements
DATA SHEET
PACKING STYLE
A
–65 to +150
RATING
= 25 C)
150
10
5
3
2
UNIT
mW
mA
V
V
V
C
C
SILICON TRANSISTOR
PIN CONFIGURATION (Top View)
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
PACKAGE DRAWINGS
Q
6
1
1
PA807T
1.25±0.1
2.1±0.1
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
5
2
(Unit: mm)
©
©
Q
4
3
2
1995
1994

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UPA807T Summary of contents

Page 1

... QUANTITY PA807T Loose products (50 PCS) PA807T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation ...

Page 2

... Insertion Power Gain ( 21e Noise Figure (1) NF Noise Figure ( Ratio FE1 FE2 Notes 1. Pulse Measurement Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. h CLASSIFICATION FE Rank KB Marking T84 h Value 70 to 140 FE TYPICAL CHARACTERISTICS (T TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 ...

Page 3

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current I (mA) C NOISE FIGURE vs. COLLECTOR CURRENT ...

Page 4

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.0000 0.982 –3.7 200.0000 0.983 –7.5 300.0000 0.973 –10.6 400.0000 0.955 –14.9 500.0000 0.946 –17.9 600.0000 0.918 –22.1 700.0000 0.900 ...

Page 5

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.0000 0.867 –9.9 200.0000 0.834 –19.0 300.0000 0.782 –25.7 400.0000 0.713 –34.0 500.0000 0.655 –39.7 600.0000 0.576 –46.5 700.0000 0.514 ...

Page 6

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.0000 0.982 –3.3 200.0000 0.985 –6.8 300.0000 0.977 –9.8 400.0000 0.960 –13.9 500.0000 0.952 –16.7 600.0000 0.925 –20.7 700.0000 0.908 ...

Page 7

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.0000 0.885 –8.3 200.0000 0.859 –15.7 300.0000 0.811 –22.2 400.0000 0.742 –30.3 500.0000 0.689 –35.3 600.0000 0.612 –41.5 700.0000 0.550 ...

Page 8

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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