UPA802T NEC, UPA802T Datasheet

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UPA802T

Manufacturer Part Number
UPA802T
Description
6-pin small MM high-frequency double transistor
Manufacturer
NEC
Datasheet

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UPA802T
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UPA802T-T1
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Document No. ID-3636
Date Published April 1995 P
Printed in Japan
(O.D. No. ID-9143)
to amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
• High Gain
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2
ORDERING INFORMATION
Remark If you require an evaluation sample, please contact an NEC
ABSOLUTE MAXIMUM RATINGS (T
Note 110 mW must not be exceeded in 1 element.
PART NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
The PA802T has built-in 2 low-voltage transistors which are designed
NF = 1.4 dB TYP. @ f = 1 GHz, V
|S
PA802T-T1
PA802T
21e
|
2
PARAMETER
= 12 dB TYP. @ f = 1 GHz, V
Sales Representative. (Unit sample quantity is 50 pcs.)
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
QUANTITY
HIGH-FREQUENCY LOW NOISE AMPLIFIER
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The information in this document is subject to change without notice.
NPN SILICON EPITAXIAL TRANSISTOR
PRELIMINARY DATA SHEET
2SC4227)
SYMBOL
V
V
V
T
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
P
T
CBO
CEO
EBO
I
stg
C
T
j
CE
CE
= 3 V, I
= 3 V, I
A
150 in 1 element
200 in 2 elements
= 25 C)
PACKING STYLE
–65 to +150
C
RATING
= 7 mA
C
150
1.5
20
10
65
= 7 mA
Note
UNIT
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
PIN CONFIGURATION (Top View)
PACKAGE DRAWINGS
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
PA802T
6
Q
1
1
1.25±0.1
2.1±0.1
5
2
©
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
(Unit: mm)
4
Q
3
2
1995

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UPA802T Summary of contents

Page 1

... PART NUMBER QUANTITY PA802T Loose products (50 PCS) PA802T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current ...

Page 2

... T Feed-back Capacitance Insertion Power Gain | Noise Figure NF h Ratio FE1 FE2 Notes 1. Pulse Measurement Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. h CLASSIFICATION FE Rank FB Marking R34 h Value 70 to 150 110 to 240 FE TYPICAL CHARACTERISTICS ( Characteristics T A 200 ...

Page 3

Characteristics MHz 2.0 1.0 0.5 0.2 0 Collector to Base Voltage V ( Characteristics 21e ...

Page 4

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.000 .804 –23.8 200.000 .692 –48.6 300.000 .581 –70.3 400.000 .489 –89.0 500.000 .419 –104.9 600.000 .376 –117.1 700.000 .342 ...

Page 5

mA FREQUENCY S11 MHz MAG ANG 100.0000 1.009 –14.5 200.0000 .955 –29.7 300.0000 .937 –42.6 400.0000 .864 –56.2 500.0000 .838 –67.3 600.0000 .775 –79.3 700.0000 .745 –88.5 ...

Page 6

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance ...

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