NDD03N60ZT4G ON Semiconductor, NDD03N60ZT4G Datasheet - Page 3

• Manufacturer Part Number: NDD03N60ZT4G
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD03N60ZT4G

• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Mounting Type: Surface Mount
• Power - Max: 61W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 61 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Package: 3DPAK
• Channel Mode: Enhancement
• Channel Type: N
• Typical Fall Time: 10 ns
• Typical Rise Time: 8 ns
• Typical Turn-off Delay Time: 16 ns
• Typical Turn-on Delay Time: 9 ns
• Maximum Continuous Drain Current: 2.6 A
• Maximum Drain Source Voltage: 600 V
• Maximum Gate Source Voltage: 30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
0.0
5.5
Figure 3. On−Region versus Gate−to−Source
V
I
D
GS
Figure 5. On−Resistance Variation with
6.0
−25
Figure 1. On−Region Characteristics
= 1.2 A
V
V
= 10 V
DS
GS
T
5.0
J
, DRAIN−TO−SOURCE VOLTAGE (V)
6.5
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
V
GS
7.0
= 10 V
25
Temperature
10.0
7.0 V
Voltage
7.5
50
8.0
15.0
75
8.5
6.0 V
TYPICAL CHARACTERISTICS
5.5 V
5.0 V
100
9.0
T
I
6.5 V
20.0
D
J
= 1.2 A
= 25°C
http://onsemi.com
125
9.5
150
10.0
25.0
3
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
3.00
1.15
1.10
1.05
1.00
0.95
0.90
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
0.0
3
I
Figure 6. BV
V
V
D
T
GS
DS
T
J
= 1 mA
−25
Figure 4. On−Resistance versus Drain
J
= 25°C
0.5
= 10 V
= 25 V
= 150°C
4
V
Figure 2. Transfer Characteristics
GS
T
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
Current and Gate Voltage
1.0
I
5
D
DSS
, DRAIN CURRENT (A)
25
Variation with Temperature
1.5
T
6
J
50
= −55°C
T
J
2.0
7
= 25°C
75
2.5
8
100
125
3.0
9
150
3.5
10